Low noise amplifier based on 0.18 µm silicon-on-insulator technology

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Low-Power Low-Noise Neural Amplifier in 0.18 μm FD-SOI Technology

For recording of neural signals from large population of neurons, stringent constraints are imposed on the design of neural amplifiers. We have designed neural amplifier in FDSOI technology in order to achieve lower power consumption, smaller area and better noise efficiency factor compared to the standard bulk processes. A symmetric pseudo resistor was realized with resistances on the order of...

متن کامل

A 60-GHz Low Noise Amplifier in 0.13-μm CMOS

The low noise amplifier (LNA) serves as the first component of the radio frequency receiver system. The performance of LNA determines the sensitivity and selectivity of the receiver. In order to maximize performance the gain, noise figure and input matching of LNA needs to be optmized. This paper presents a 60GHz low noise amplifier on 0.13-μm standard CMOS technology designed using classical n...

متن کامل

Development of silicon-on-insulator waveguide technology

An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangularand ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed. Experimental work with straight and bent 8 to 10 μm thick SOI ridge wa...

متن کامل

Realization of a Low Noise Amplifier using 0.35 μm SiGe-BiCMOS Technology for IEEE 802.11a Applications

.................................................................................................... viii Özet ............................................................................................................... ix Chapter

متن کامل

A Study on Transimpedance Amplifier in 0.35 μm CMOS Technology

This paper presents a design of the transimpedance amplifier using 0.35μm CMOS technology. In the proposed transimpedance amplifier, feedback resistor RF of conventional transimpedance amplifier has been replaced by NMOS transistor as an active feedback resistor. This circuit operates at 3.3V power supply voltage and for a photocurrent of 0.5μA.The proposed transimpedance amplifier having low n...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Nanoindustry Russia

سال: 2017

ISSN: 1993-8578

DOI: 10.22184/1993-8578.2017.71.1.88.94